2007. 8. 9 1/6 semiconductor technical data KMB060N60PA n channel mos field effect transistor revision no : 2 general description it s mainly suitable for low viltage applications such as automotive, dc/dc converters and a load switch in battery powered applications features v dss = 60v, i d = 60a drain-source on resistance : r ds(on) =14m (max.) @v gs = 10v mosfet maximum rating (ta=25 unless otherwise noted) dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 12 3 g d s characteristic symbol rating unit drain-source voltage v dss 60 v gate-source voltage v gss 25 v drain current dc i d * 60 a pulsed (note 1) i dp 240 a drain-source diode forward current i s 60 a drain power dissipation p d * 25 150 w maximum junction temperature t j -55 175 storage temperature range t stg -55 175 note1) pulse test : pulse width 10 s duty cycle 1% characteristic symbol rating unit thermal resistance, junction-to-ambient r thja 62.5 /w thermal resistance, junction-to-case r thjc 1.0 /w thermal characteristics equivalent circuit
2007. 8. 9 2/6 KMB060N60PA revision no : 2 mosfet electrical characteristics (ta=25 unless otherwise noted) note 1) pulse test : pulse width 10 s, duty cycle 1%. note 2) essentially independent of operating temperature. characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 60 - - v drain cut-off current i dss v ds =60v, v gs =0v, - - 1 a gate leakage current i gss v gs = 15v, v ds =0v - - 100 na gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v drain-source on resistance r ds(on) v gs =10v, i d =30a - 11.5 14 forward transconductance g fs v ds =15v, i d =30a - 20 - dynamic input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 2000 - pf output capacitance c oss - 360 - reverse transfer capacitance c rss - 125 - total gate charge q g v ds = 48v, v gs = 10v, i d =30a (note1,2) - 70 - nc gate-source charge q gs - 15 - gate-drain charge q gd - 20 - turn-on delay time t d(on) v dd = 30v i d =30a r g = 25 (note1,2) - 35 - turn-on rise time t r - 220 - ns turn-off delay time t d(off) - 55 - turn-off fall time t r - 30 - diode electrical characteristics (ta=25 unless otherwise noted) characteristic symbol test condition min. typ. max. unit diode forward voltage v sd i sd =60a, v gs =0v - - 1.5 v reverse recovery time t rr v gs =0v, i s =60a, dif/dt=100a/ s - 110 - 701 a 2 2 kmb 060n60p product name lot no 1 1 marking
2007. 8. 9 3/6 KMB060N60PA revision no : 2 fig 1. i d - v ds drain - source voltage v ds (v) 0246810 0 40 80 120 150 180 drain current i d (a) fig 3. i d - v gs gate - source voltage v gs (v) drain current i d (a) 4.5v 4v 3.5v 3v 2.5v v gs =5v fig 2. r ds(on) - i d drain current i d (a) 0 1020304050 0 5 10 15 20 25 drain source on resistance r ds(on) ( ? ) common source tc=25 c pulse test common source tc=25 c pulse test v gs =10v 0246810 0 40 80 120 160 200 v gs =15v fig 4. r ds(on) - t j 0 50 -50 100 150 normalized on resistance 0.2 0.6 2.2 1.0 1.4 1.8 junction temperature t j ( ) c v gs = 10v i ds = 30a fig 5. v th - t j 0 50 -50 100 150 normalized on resistance 0.6 0.4 0.8 1 1.2 1.4 junction temperature t j ( ) c v ds = v gs i d = 250 a fig 6. i dr - v dsf 0.2 0.4 0.8 0.6 1.2 1.0 1.4 reverse drain current i s (a) source - drain voltage v sd (v) 10 0 10 1 10 -1 v gs = 0 250 s pulse test 150 c 25 c
2007. 8. 9 4/6 KMB060N60PA revision no : 2 drain current i d (a) gate - charge q g (nc) fig 8. c - v ds drain - source voltage v ds (v) 0 10 6 2 4 8 80 40 60 100 20 0 fig 7. q g - v ds fig 9. safe operation area gate - source voltage v gs (v) gate - charge q g (nc) gate - source voltage v gs (v) 0 1000 2000 3000 4000 5000 0 1020304050 10 1 10 1 10 3 10 -1 10 0 10 0 10 2 10 3 10 2 10 -1 f = 1mhz v gs = 0v c rss 1ms 10ms 100 s dc square wave pulse duration (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 0.003 0.01 0.1 1 fig 11. r th - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm single pulse transient thermal impedance [ / w] c c oss c iss fig 9. i d - t j drain current i d (a) 0 20 10 30 40 50 60 70 25 50 75 100 125 150 175 r ds(on) limits - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm duty=0.5 0.2 0.1 0.05 0.02 0.01 junction temperature t j ( c)
2007. 8. 9 5/6 KMB060N60PA revision no : 2 0.5 x v dss t p - single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss - gate charge i d i d v ds v gs v gs v ds v ds v gs 1.0 ma 0.8 x v dss 0.5 x v dss schottky diode 10v -4.5v 6 ? r l q g q gd q gs q t r t d(off) t off t d(on) t on t f 90% 10% - resistive load switching v gs
2007. 8. 9 6/6 KMB060N60PA revision no : 2 - source - drain diode reverse recovery and dv /dt i f i s v ds v sd 0.8 x v dss i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm
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